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1

GaAs surface chemical passivation by (NH4)2S+Se and the effect of annealing treatments

S. Belkouch, C. Aktik, H. Xu, E.L. Ameziane

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 309 KB

english, 1996

2

Effect of thermal annealing on the structural and mechanical properties of amorphous silicon carbide films prepared by polymer-source chemical vapor deposition

Y. Awad, M.A. El Khakani, D. Brassard, R. Smirani, N. Camiré, M. Lessard, C. Aktik, M. Scarlete, J. Mouine

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 598 KB

english, 2010

3

Passivation of GaAs using P[sub 2]S[sub 5]/(NH[sub 4])[sub 2]S+Se and (NH[sub 4])[sub 2]S+Se

Fanaei S., T., Aktik, C.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2004

Language:

english

File:

PDF, 353 KB

english, 2004

4

Energy requirements and cost in polymer curing processes

M.Y. Boluk, M. Aktik, E. Bilgen

Journal:

Year:

1990

Language:

english

File:

PDF, 794 KB

english, 1990

5

Structural and mechanical properties of amorphous silicon carbonitride films prepared by vapor-transport chemical vapor deposition

Y. Awad, M.A. El Khakani, C. Aktik, J. Mouine, N. Camiré, M. Lessard, M. Scarlete, H.A. Al-Abadleh, R. Smirani

Journal:

Surface and Coatings Technology

Year:

2009

Language:

english

File:

PDF, 760 KB

english, 2009

6

Electrical characterization of amorphous silicon carbide thin films deposited via polymeric source chemical vapor deposition

T. Fanaei, N. Camiré, C. Aktik, S. Gujrathi, M. Lessard, Y. Awad, E. Oulachgar, M. Scarlete

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 780 KB

english, 2008

7

Thermally induced interfacial interactions between various metal substrates and a-SiC thin films deposited by a polymer-source chemical vapor deposition

Y. Awad, M.A. El Khakani, C. Aktik, J. Mouine, N. Camiré, M. Lessard, M. Scarlete

Journal:

Materials Chemistry and Physics

Year:

2007

File:

PDF, 880 KB

2007

8

Fabrication and Characterization of GaAs MOS Capacitor With CVD Grown Polymer-Based Thin Film as a Gate Dielectric

Oulachgar, E.H., Aktik, C., Scarlete, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 438 KB

english, 2010

9

A novel doping procedure for a-Si:H

C Aktik, M Aktik, J.-C Bruyere, J.F Currie, S Poulin, A Yelon, J.L Brebner, R.W Cochrane, R Groleau, H Lu

Journal:

Journal of Non-Crystalline Solids

Year:

1983

Language:

english

File:

PDF, 170 KB

english, 1983

10

Structural analysis of silicon carbon nitride films prepared by vapor transport-chemical vapor deposition

Awad, Y., El Khakani, M. A., Scarlete, M., Aktik, C., Smirani, R., Camire, N., Lessard, M., Mouine, J.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 397 KB

english, 2010

11

Photoluminescence study of gallium arsenide irradiated with 15 MeV alpha particles

Sellami, L., Aubin, M., Aktik, C., Carlone, C., Houdayer, A., Hinrichsen, P.

Journal:

IEEE Transactions on Nuclear Science

Year:

1999

Language:

english

File:

PDF, 400 KB

english, 1999

12

Passivation of GaAs metal–insulator–semiconductor structures by (NH[sub 4])[sub 2]S[sub x] and by evaporation of SiO[sub 2]

Jaouad, A., Aktik, Ç.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2002

Language:

english

File:

PDF, 281 KB

english, 2002

13

[IEEE . RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems - La Grande-Motte, France (9-12 Sept. 1991)] . RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems - Radiation effects on heavily doped n-GaAs*

Carlone, C., Parenteau, M., Aktik, C., Khanna, S.M., Rowell, N.L., Gerdes, J.W.

Year:

1992

Language:

english

File:

PDF, 457 KB

english, 1992

14

Carrier loss by rapid thermal-annealing in Si-doped GaAs grown by MOCVD (metal-organic chemical vapour deposition)

Aktik, C., Currie, J. F., Bosse, F., Cochrane, R. W., Auclair, J.

Journal:

Canadian Journal of Physics

Year:

1991

Language:

english

File:

PDF, 224 KB

english, 1991

15

Epitaxial growth of gallium arsenide prepared by low-pressure metal-organic chemical vapour deposition at low temperatures

Aktik, C., Beerens, J., Blain, S., Bsiesy, A.

Journal:

Canadian Journal of Physics

Year:

1992

File:

PDF, 560 KB

1992

16

Hydrogen-assisted reactive evaporation of quasi-stoichiometric polycrystalline InSb films

Leclerc, G., Beerens, J., Aktik, C., Paquin, L., Isai, M.

Journal:

Canadian Journal of Physics

Year:

1992

File:

PDF, 150 KB

1992

17

Progress in amorphous-silicon photovoltaic-device research

Brebner, J. L., Cochrane, R. W., Groleau, R., Gujrathi, S., Kéroack, D., Lépine, Y., Martin, J.-P., Vanaček, M., Aktik, C., Aktik, M., Azelmad, A., Currie, J. F., Poulin-Dandurand, S., Ranchoux, B., S

Journal:

Canadian Journal of Physics

Year:

1985

Language:

english

File:

PDF, 633 KB

english, 1985

18

Doping glow-discharge amorphous silicon by metal coevaporation

Perluzzo, G., Aktik, C., Currie, J. F., Poulin-Dandurand, S., Yelon, A., Brebner, J. L., Cochrane, R. W.

Journal:

Canadian Journal of Physics

Year:

1987

Language:

english

File:

PDF, 180 KB

english, 1987

19

Interface state buildup by high-field stressing in various metal-oxide-semiconductor insulators using deep level transient spectroscopy

Belkouch, S., Jean, C., Aktik, C., Ameziane, E. L.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 305 KB

english, 1995

20

A simple velocity model for low-pressure metalorganic chemical vapor deposition

Aktik, Cetin, Belkouch, Said

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 334 KB

english, 1995

21

Fabrication of (NH[sub 4])[sub 2]S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition

A. Jaouad, V. Aimez, C. Aktik, K. Bellatreche, A. Souifi

Year:

2004

Language:

english

File:

PDF, 333 KB

english, 2004

22

Density of states in amorphous silicon produced by microwave glow discharge

Year:

1982

Language:

english

File:

PDF, 446 KB

english, 1982

23

Formation of EL2, AsGa and U band in irradiated GaAs: Effects of annealing

A. Jorio, C. Carlone, M. Parenteau, C. Aktik, N. L. Rowell

Year:

1996

Language:

english

File:

PDF, 344 KB

english, 1996

24

Electrical and optical characterization of SiONC dielectric thin film deposited by polymer-source chemical vapor deposition

E. H. Oulachgar, C. Aktik, M. Scarlete, S. Dostie, R. Sowerby, S. Gujrathi

Year:

2007

Language:

english

File:

PDF, 333 KB

english, 2007

25

The photoconductivity spectrum of electron and neutron irradiated n lightly doped GaAs

Khanna, S.M., Carlone, C., Halle, S., Parenteau, M., Beliveau, A., Aktik, C., Gerdes, J.W.

Journal:

IEEE Transactions on Nuclear Science

Year:

1991

Language:

english

File:

PDF, 668 KB

english, 1991

26

Se chemical passivation and annealing treatment for GaAs Schottky diode

Xu, Huaiqi, Belkouch, Saïd, Aktik, Cetin, Rasmussen, Wolfgang

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 251 KB

english, 1995

27

A new polymer insulated gate field-effect transistor

Aktik, M., Segui, Y., Ai, Bui

Journal:

Journal of Applied Physics

Year:

1980

Language:

english

File:

PDF, 422 KB

english, 1980

28

Growth of polymer films on compound semiconductors and dry etching process

Aktik, M., Segui, Y.

Journal:

Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 448 KB

english, 1979

29

Chemical and Structural Characterization of SiONC Dielectric Thin Film Deposited by PSCVD

Oulachgar, E. H., Aktik, C., Dostie, S., Sowerby, R., Gujrathi, S., Scarlete, M.

Journal:

Journal of The Electrochemical Society

Year:

2006

Language:

english

File:

PDF, 111 KB

english, 2006

30

Characterization of Silicon Carbide Thin Films Obtained Via Sublimation of a Solid Polymer Source Using Polymer-Source CVD Process

Oulachgar, El Hassane, Aktik, Cetin, Dostie, Starr, Gujrathi, Subhash, Scarlete, Mihai

Journal:

MRS Proceedings

Year:

2007

Language:

english

File:

PDF, 2.99 MB

english, 2007

31

Low temperature low pressure MOCVD AlxGa1-xAs layer grown as a dielectric for GaAs MIS devices

Aktik, Ç., Dubuc, C., Beauvais, J.

Journal:

Electronics Letters

Year:

1995

Language:

english

File:

PDF, 268 KB

english, 1995